lead-free ds30122 rev. 8 - 2 1 of 4 mmdt2227 www.diodes.com diodes incorporated mmdt2227 complementary npn / pnp small signal surface mount transistor complementary pair epitaxial planar die construction ultra-small surface mount package one 2222a type (npn), one 2907a type (pnp) ideal for low power amplification and switching lead free/rohs compliant (note 2) characteristic symbol npn2222a unit collector-base voltage v cbo 75 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6.0 v collector current - continuous i c 600 ma features a m j l d b c h k g f c 2 b 1 e 1 e 2 b 2 c 1 mechanical data case: sot-363 case material: molded plastic. ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminals: solderable per mil-std-202, method 208 lead free plating (matte tin finish annealed over alloy 42 leadframe). terminal connections: see diagram ordering & date code information: see page 4 marking (see page 3): k27 weight: 0.006 grams (approximate) note: 1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad layout document ap02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. no purposefully added lead. characteristic symbol pnp2907a unit collector-base voltage v cbo -60 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -5.0 v collector current - continuous i c -600 ma note: e1, b1, and c1 = 2907a type (pnp) e2, b2, and c2 = 2222a type (npn) type marking indicates orientation. sot-363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal f 0.30 0.40 h 1.80 2.20 j 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.25 8 all dimensions in mm c 2 b 1 e 1 e 2 b 2 c 1 characteristic symbol value unit total power dissipation (note 1) p d 200 mw thermal resistance, junction to ambient (note 1) r ja 625 c/w operating and storage and temperature range t j , t stg -55 to +150 c maximum ratings, total device @ t a = 25 c unless otherwise specified maximum ratings, 2222a type (npn) @ t a = 25 c unless otherwise specified maximum ratings, 2907a type (pnp) @ t a = 25 c unless otherwise specified
ds30122 rev. 8 - 2 2 of 4 mmdt2227 www.diodes.com electrical characteristics, 2222a type (npn) characteristic symbol min max unit test condition off characteristics (note 3) collector-base breakdown voltage v (br)cbo 75 v i c = 10 a, i e = 0 collector-emitter breakdown voltage v (br)ceo 40 v i c = 10ma, i b = 0 emitter-base breakdown voltage v (br)ebo 6.0 v i e = 10 a, i c = 0 collector cutoff current i cbo 10 na a v cb = 60v, i e = 0 v cb = 60v, i e = 0, t a = 150 c collector cutoff current i cex 10 na v ce = 60v, v eb(off) = 3.0v emitter cutoff current i ebo 10 na v eb = 3.0v, i c = 0 base cutoff current i bl 20 na v ce = 60v, v eb(off) = 3.0v on characteristics (note 3) dc current gain h fe 35 50 75 100 40 50 35 300 i c = 100 a, v ce = 10v i c = 1.0ma, v ce = 10v i c = 10ma, v ce = 10v i c = 150ma, v ce = 10v i c = 500ma, v ce = 10v i c = 10ma, v ce = 10v, t a = -55 c i c = 150ma, v ce = 1.0v collector-emitter saturation voltage v ce(sat) 0.3 1.0 v i c = 150ma, i b = 15ma i c = 500ma, i b = 50ma base-emitter saturation voltage v be(sat) 0.6 1.2 2.0 v i c = 150ma, i b = 15ma i c = 500ma, i b = 50ma small signal characteristics output capacitance c obo 8pf v cb = 10v, f = 1.0mhz, i e = 0 input capacitance c ibo ?25pf v eb = 0.5v, f = 1.0mhz, i c = 0 current gain-bandwidth product f t 300 mhz v ce = 20v, i c = 20ma, f = 100mhz noise figure nf 4.0 db v ce = 10v, i c = 100 a, r s = 1.0k f = 1.0khz switching characteristics delay time t d 10 ns v cc = 30v, i c = 150ma, v be(off) = - 0.5v, i b1 = 15ma rise time t r 25 ns storage time t s 225 ns v cc = 30v, i c = 150ma, i b1 = i b2 = 15ma fall time t f 60 ns note: 3. pulse test: pulse width 300 s, duty cycle 2%. capacitance (pf) v , reverse voltage (v) fig. 1, typical r capacitance characteristics (2222a type - npn) 0 5 10 15 20 25 30 35 0 24 6 8 10 12 14 16 18 20 cibo f=1 mhz cobo 0.001 0.01 1 10 0.1 100 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2 . 0 i , base current (ma) fig. 2, typical collector saturation region ( 2222a t y pe - npn ) b v collector-emitter voltage (v) ce i=1ma c i = 10ma c i=30ma c i = 100ma c i = 300ma c @ t a = 25 c unless otherwise specified
ds30122 rev. 8 - 2 3 of 4 mmdt2227 www.diodes.com characteristic symbol min max unit test condition off characteristics (note 4) collector-base breakdown voltage v (br)cbo -60 v i c = -10 a, i e = 0 collector-emitter breakdown voltage v (br)ceo -60 v i c = -10ma, i b = 0 emitter-base breakdown voltage v (br)ebo -5.0 v i e = -10 a, i c = 0 collector cutoff current i cbo -10 na a v cb = -50v, i e = 0 v cb = -50v, i e = 0, t a = 125 c collector cutoff current i cex -50 na v ce = -30v, v eb(off) = -0.5v base cutoff current i bl -50 na v ce = -30v, v eb(off) = -0.5v on characteristics (note 4) dc current gain h fe 75 100 100 100 50 300 i c = -100a, v ce = -10v i c = -1.0ma, v ce = -10v i c = -10ma, v ce = -10v i c = -150ma, v ce = -10v i c = -500ma, v ce = -10v collector-emitter saturation voltage v ce(sat) -0.4 -1.6 v i c = -150ma, i b = -15ma i c = -500ma, i b = -50ma base-emitter saturation voltage v be(sat) -1.3 -2.6 v i c = 150ma, i b = 15ma i c = 500ma, i b = 50ma small signal characteristics output capacitance c obo 8.0 pf v cb = -10v, f = 1.0mhz, i e = 0 input capacitance c ibo ?30pf v eb = -2.0v, f = 1.0mhz, i c = 0 current gain-bandwidth product f t 200 mhz v ce = -20v, i c = -50ma, f = 100mhz switching characteristics turn-on time t off 45 ns delay time t d 10 ns v cc = -30v, i c = -150ma, i b1 = -15ma rise time t r 40 ns turn-off time t off 100 ns storage time t s 80 ns v cc = -6.0v, i c = -150ma, i b1 = i b2 = -15ma fall time t f 30 ns electrical characteristics, 2907a type (pnp) @ t a = 25 c unless otherwise specified note: 4. short duration test pulse used to minimize self-heating effect. capacitance (pf) v , reverse voltage (v) fig. 3, typical r capacitance characteristics ( 2907a t y pe - pnp ) 0 5 10 15 20 25 30 3 5 0 24 6 8 10 12 14 16 18 20 cobo cibo f=1 mhz i , base current (ma) fig. 4, typical collector saturation region (2907a type - pnp) b v,c o llect o r-emitter v o ltage (v) ce -0.2 0 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -0.01 -0.001 -1 -10 -0.1 -100 i = -1ma c i = -10ma c i = -30ma c i = -100ma c i = -300ma c
ds30122 rev. 8 - 2 4 of 4 mmdt2227 www.diodes.com month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 code jklmnpr st u vw date code key k27 ym k27 = product type marking code ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september marking information note: 5. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. device packaging shipping MMDT2227-7-F sot-363 3000/tape & reel ordering information (note 5) important notice life support www.diodes.com diodes, inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhance- ments, improvements, or other changes. diodes, inc. does not assume any liability arising out of the application or use of any product described herei n; neither does it convey any license under its patent rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on our website, harmless against all damages. the products located on our website at are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the express written approval of diodes incorporated.
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